Characterization of PbTe p - n+ junction grown by molecular beam epitaxy
نویسندگان
چکیده
منابع مشابه
Characterization of PbTe p− n Junction Grown by Molecular Beam Epitaxy
In this work we investigate the electrical properties of PbTe p − n junction. Mesa diodes were fabricated from p − n PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were meas...
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ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 2004
ISSN: 0103-9733
DOI: 10.1590/s0103-97332004000400029